sd103aw-v, sd103bw-v, sd103cw-v document number 85681 rev. 1.4, 05-aug-10 vishay semiconductors www.vishay.com 1 17431 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal schottky diodes features ? the low forward voltage drop and fast switching make it id eal for protection of mos devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. ? other applications are click suppression, efficient full wave br idges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. ? the sd103 series is a metal-on-silicon schottky barrier device which is protected by a pn junction guard ring. ? this diode is also available in the minimelf case with the type designations ll103a to ll103c, do-35 case with the type designations sd103a to sd103c and sod-323 case with type designations sd103aws-v to sd103cws-v. ? for general purpose applications ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sod-123 weight: approx. 10.3 mg packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified note 1) valid provided that electrodes ar e kept at ambient temperature thermal characteristics t amb = 25 c, unless otherwise specified note 1) valid provided that electrodes ar e kept at ambient temperature part ordering code type marking remarks sd103aw-v sd103aw-v-gs18 or sd103aw-v-gs08 s6 tape and reel sd103bw-v sd103bw-v-gs18 or sd103bw-v-gs08 s7 tape and reel sd103cw-v sd103cw-v-gs18 or sd103cw-v-gs08 s8 tape and reel parameter test condition part symbol value unit peak reverse voltage sd103aw-v v rrm 40 v sd103bw-v v rrm 30 v sd103cw-v v rrm 20 v power dissipation (infinite heat sink) p tot 400 1) mw single cycle surge 10 s square wave i fsm 2a parameter test condition symbol value unit thermal resistance junction to ambient air r thja 300 1) k/w junction temperature t j 125 c storage temperature range t stg - 55 to + 150 c
www.vishay.com 2 document number 85681 rev. 1.4, 05-aug-10 sd103aw-v, sd103bw-v, sd103cw-v vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition part symbol min. ty p. max. unit leakage current v r = 30 v sd103aw-v i r 5a v r = 20 v sd103bw-v i r 5a v r = 10 v sd103cw-v i r 5a forward voltage drop i f = 20 ma v f 370 mv i f = 200 ma v f 600 mv diode capacitance v r = 0 v, f = 1 mhz c d 50 pf reverse recovery time i f = i r = 50 ma to 200 ma, recover to 0.1 i r t rr 10 ns figure 1. typical variation of forward current vs. forward voltage figure 2. typical high current forward conduction curve 1 8 4 88 0.01 1000 100 0.1 1 10 0 0.4 0.6 0. 8 1.0 0.2 i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 1 8 4 8 9 4 5 3 2 0 1 0.5 1.0 01.5 i - for w ard c u rrent (a) f v f - for w ard v oltage ( v ) d u ty cycle = 2 % t p = 300 ms figure 3. typical variation of reverse current at various temperatures figure 4. typical capacitance vs. reverse voltage 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 v - re v erse v oltage ( v ) i r - re v erse c u rrent ( a) r 200 8 4 75 c 50 c 25 c 100 c t am b = 125 c 1 8 491 10 20 30 40 050 c- diode capacitance (pf) d v r - re v erse v oltag e ( v ) 100 10 1
sd103aw-v, sd103bw-v, sd103cw-v document number 85681 rev. 1.4, 05-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches) : sod-123 figure 5. blocking voltage deration vs. temperature at various average forward currents t am b - am b ient temperat u re (c) 1 8 492 100 200 0 v r - re v erse v oltage ( v ) 30 10 40 20 0 50 = 400 ma i f 100 ma 200 ma 0.1 (0.004) max. 2. 8 5 (0.112) 2.55 (0.100) 3. 8 5 (0.152) 3.55 (0.140) 1.7 (0.067) 1.40 (0.055) mo u nting pad layo u t 2.5 (0.09 8 ) 0. 8 5 (0.033) 0. 8 5 (0.033) 0. 8 5 (0.033) cathode b ar 0.65 (0.026) 0.45 (0.01 8 ) 0.10 (0.004) 1 (0.039) 0.15 (0.006) 1.35 (0.053) 0.2 (0.00 8 ) 0 to 8 0.45 (0.01 8 ) 0.25 (0.010) 0.5 (0.020) ref. re v . 4 - date: 24. sep. 2009 doc u ment no.: s 8 - v -3910.01-001 (4) 17432
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